1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si
نویسندگان
چکیده
منابع مشابه
1-μm InAs quantum dot micro-disk lasers directly grown on exact (001) Si
Capitalizing on our novel epitaxial processes, we demonstrate subwavelength micro-disk lasers as small as 1 μm in diameter on exact (001) silicon substrates. Under continuous wave optical pumping at 10 K, low thresholds down to 35 μW were obtained together with a high spontaneous emission factor of 0.3.
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We demonstrate the first electrically pumped continuous-wave (CW) III-V semiconductor lasers epitaxially grown on on-axis (001) silicon substrates without offcut or germanium layers, using InAs/GaAs quantum dots as the active region and an intermediate GaP buffer between the silicon and device layers. Broad-area lasers with uncoated facets achieve room-temperature lasing with threshold current ...
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Direct integration of high-performance laser diodes on silicon will dramatically transform the world of photonics, expediting the progress toward low-cost and compact photonic integrated circuits (PICs) on the mainstream silicon platform. Here, we report, to the best of our knowledge, the first 1.3 μm room-temperature continuous-wave InAs quantum-dot micro-disk lasers epitaxially grown on indus...
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High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-i...
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ژورنال
عنوان ژورنال: Laser & Photonics Reviews
سال: 2020
ISSN: 1863-8880,1863-8899
DOI: 10.1002/lpor.202000037